منابع مشابه
Studies of thin strained InAs, AlAs, and AlSb layers by spectroscopic ellipsometry
Studies of thin strained InAs, AlAs, and AlSb layers by spectroscopic ellipsometry" (1996). The optical constants for thin layers of strained InAs, AlAs, and AlSb have been investigated by spectroscopic ellipsometry and multi-sample analyses. These materials are important for high-speed resonant tunneling diodes in the AlAs/InAs/In 0.53 Ga 0.47 As and AlSb/InAs material systems. Understanding t...
متن کاملBand hybridization and spin-splitting in InAs/AlSb/GaSb type II and broken-gap quantum wells
We present a detailed theoretical study on the features of band hybridization and zero-field spin-splitting in InAs/AlSb/GaSb quantum wells QWs . An eight-band k ·p approach is developed to calculate the electronic subband structure in such structures. In the absence of the AlSb layer, the hybridized energy gaps can be observed at the anticrossing points between the lowest electron subband and ...
متن کاملAnderson impurity in a correlated conduction band
We investigate the physics of a magnetic impurity with spin 1/2 in a correlated metallic host. Describing the band by a Hubbard Hamiltonian, the problem is analyzed using dynamical mean-field theory in combination with Wilson's nonperturbative numerical renormalization group. We present results for the single-particle density of states and the dynamical spin susceptibility at zero temperature. ...
متن کاملAn Ultra-Low Power InAs/AlSb HEMT X-Band Low-Noise Amplifier and RF Switch
Several antimonide-based compound semiconductor (ABCS) microstrip MMICs, an X-Band low-noise amplifier and an rf switch, using 0.1-μm gate length Antimonide Based Compound Semiconductor (ABCS) metamorphic InAs/AlSb HEMTs, have been fabricated and characterized on a 50 μm GaAs substrate. The compact 0.7 mm two-stage X-band LNA demonstrated a 1.25 dB noise-figure at 10 GHz with an associated gain...
متن کاملDX centers in AlAs and GaAs-AlAs selectively doped superlattices
Dx centers have been investigated using deep level transient
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review Letters
سال: 1963
ISSN: 0031-9007
DOI: 10.1103/physrevlett.11.358